Excitonic properties of wurtzite InP nanowires grown on silicon substrate

M H Hadj Alouane1, N Chauvin, H Khmissi

  • 1Institut des Nanotechnologies de Lyon, (INL)-UMR5270-CNRS, Université de Lyon, INSA-Lyon, Villeurbanne, France. mohamed-helmi.hadj-alouane@insa-lyon.fr

Nanotechnology
|December 25, 2012
PubMed

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