Related Experiment Video

Updated: May 15, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

A Gassenq1, F Gencarelli, J Van Campenhout

  • 1INTEC Department, Ghent University-IMEC, Ghent, Belgium. alban.gassenq@intec.ugent.be

Optics Express
|December 25, 2012
PubMed

More Related Videos

Developing High Performance GaP/Si Heterojunction Solar Cells10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...