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112-Gb/s monolithic PDM-QPSK modulator in silicon
Po Dong1, Chongjin Xie, Long Chen
1Bell Labs, Alcatel-Lucent, 791 Holmdel Road, Holmdel, New Jersey 07733, USA. po.dong@alcatel-lucent.com
Optics Express
|December 25, 2012
Summary
We developed a silicon photonic integrated circuit (PIC) for dual-polarization quadrature phase-shift keying (QPSK) modulation. This device successfully demonstrated 112-Gb/s polarization-division-multiplexed QPSK modulation.
Area of Science:
- Photonics
- Optical Communications
- Integrated Optics
Background:
- High-speed optical modulators are crucial for modern data transmission.
- Silicon photonics offers a scalable platform for integrated optical devices.
Purpose of the Study:
- To present a monolithic dual-polarization quadrature phase-shift keying (QPSK) modulator.
- To demonstrate its performance in high-speed data transmission.
Main Methods:
- Design and fabrication of a silicon photonic integrated circuit (PIC).
- Integration of four high-speed silicon modulators, a polarization rotator, and a polarization beam combiner.
- Experimental demonstration of 112-Gb/s polarization-division-multiplexed (PDM) QPSK modulation.
Main Results:
- Successful demonstration of a monolithic dual-polarization QPSK modulator.
- Achieved a data rate of 112 Gb/s using PDM-QPSK modulation.
- Validated the functionality of the integrated silicon photonic components.
Conclusions:
- The developed silicon PIC is a viable solution for high-speed optical modulation.
- Monolithic integration of advanced modulation formats is feasible on silicon photonics platforms.
- This technology can advance the capacity of optical communication systems.
