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Voltage stress induced reversible diode behavior in pentacene thin films
1Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan. rmurdey@e.kuicr.kyoto-u.ac.jp
The Journal of Chemical Physics
|December 27, 2012
Summary
Pentacene thin films exhibit switchable diode behavior. Applying bias voltage at elevated temperatures reversibly alters the current-voltage characteristics of these organic semiconductor devices.
Area of Science:
- Materials Science
- Organic Electronics
- Semiconductor Physics
Background:
- Pentacene thin films are crucial organic semiconductors.
- Understanding their electrical properties is key for device applications.
- Current-voltage (I-V) characteristics reveal device behavior.
Purpose of the Study:
- To investigate the in situ current-voltage (I-V) characteristics of vacuum-deposited pentacene thin films.
- To analyze the diode-like behavior and its variability.
- To explore methods for controlling and stabilizing this behavior.
Main Methods:
- In situ measurement of I-V characteristics under ultrahigh vacuum.
- Utilizing bottom contact geometry with titanium electrodes.
- Applying high bias voltages at elevated temperatures for switching.
Main Results:
- Observed asymmetric I-V curves indicating diode-like behavior.
- Demonstrated that bias voltage application reversibly switches the diode's forward direction.
- Confirmed stability of the switched behavior over several weeks.
Conclusions:
- Pentacene thin films exhibit history-dependent, switchable diode characteristics.
- Electrical bias and temperature are effective in controlling organic device behavior.
- This switchability offers potential for novel organic electronic memory or switching applications.
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