III-V nanocrystals capped with molecular metal chalcogenide ligands: high electron mobility and ambipolar...

In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface of III-V NCs and serve as the inorganic capping groups for III-V NC surfaces. These inorganic ligands stabilize colloidal solutions of InP and InAs NCs in polar solvents and greatly facilitate charge transport between individual NCs. Charge transport studies revealed high electron mobility in the films of MCC-capped InP and InAs NCs. For example, we found that bridging InAs NCs with Cu(7)S(4)(-) MCC ligands can lead to very high electron mobility exceeding 15 cm(2)/(V s). In addition, we observed unprecedented ambipolar (positive/negative) photoresponse of MCC-capped InAs NC solids that changed sign depending on the ligand chemistry, illumination wavelength, and doping of the NC solid. For example, the sign of photoconductance of InAs NCs capped with Cu(7)S(4)(-) or Sn(2)S(6)(4-) ions converted from positive at 0.80 and 0.95 eV to negative at 1.27 and 1.91 eV. We propose an explanation of this unusually complex photoconductivity of InAs NC solids.