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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

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Analysis of implanted silicon dopant profiles.

T J Prosa¹, D Olson, B Geiser

¹Cameca Instruments Inc., Madison, WI 53711, USA.

Ultramicroscopy

|January 8, 2013

Summary

Atom probe tomography (APT) was used to measure arsenic implant doses in a NIST standard material. A 4% variation was observed, and methods to reduce this variation are discussed.

Keywords:

Atom probe tomography

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Area of Science:

Materials Science
Metrology

Background:

Accurate dose measurements are crucial for semiconductor manufacturing.
Atom probe tomography (APT) is a powerful technique for nanoscale analysis.

Purpose of the Study:

To report atom probe tomography implant dose measurements for NIST Standard Reference Material 2134 (arsenic implant).
To investigate factors influencing dose measurement variation in APT.

Main Methods:

Utilized a tip profile reconstruction method for APT analysis.
Manufactured specimens with controlled size and shape to minimize reconstruction parameter variations.
Required inputs included tip profile, post-analysis specimen radius, and sphere-to-cone radius ratio.

Main Results:

Observed a 4% variation in dose measurements under the specified conditions.
Identified key parameters affecting measurement accuracy in APT.

Conclusions:

The study demonstrates the feasibility of APT for precise implant dose measurements.
Further considerations are needed to minimize variation and approach the limit imposed by counting statistics for improved accuracy.