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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film

Fa-Hsyang Chen1, Jim-Long Her, Yu-Hsuan Shao

  • 1Department of Electronics Engineering, Chang Gung University, 333, Taoyuan, Taiwan. tmpan@mail.cgu.edu.tw.

Nanoscale Research Letters
|January 9, 2013
PubMed

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