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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Electron spin resonance in presence of a magnetic impurity in graphene

Angsula Ghosh1, J W M Pinto, H O Frota

  • 1Departamento de Física-ICE, Universidade Federal do Amazonas, Manaus-AM, Brazil. angsula@ufam.edu.br

Journal of Magnetic Resonance (San Diego, Calif. : 1997)
|January 15, 2013
PubMed

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