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Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Y C Yang¹, Jinn-Kong Sheu, Ming-Lun Lee

¹Department of Photonics, National Cheng Kung University, Tainan City 70101, Taiwan.

|January 18, 2013

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We developed efficient vertical Indium Gallium Nitride (InGaN) light-emitting diodes (LEDs) using patterned sapphire substrates. These LEDs offer higher light output and improved performance at high currents compared to conventional lateral LEDs.

Area of Science:

Materials Science
Optoelectronics
Semiconductor Devices

Background:

Conventional lateral Gallium Nitride (GaN) light-emitting diodes (LEDs) face limitations in light extraction and thermal management.
Patterned sapphire substrates (PSS) are used to improve light extraction efficiency by reducing light-guiding effects.

Purpose of the Study:

To present an efficient vertical Indium Gallium Nitride (InGaN) light-emitting diode (LED) design.
To improve light output power and reduce power degradation at high driving currents.

Main Methods:

Fabrication of vertical LEDs using patterned sapphire substrates (PSS) with thinning techniques.
Employing selective dry etching to expose the n-GaN contact layer, avoiding laser lift-off.
Achieving a sapphire-face-up structure with vertical conduction.

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Main Results:

The proposed vertical LEDs demonstrate a sapphire-face-up structure and vertical conduction.
Compared to lateral GaN LEDs on PSS, vertical LEDs exhibit higher light output power.
Vertical LEDs show less power degradation under high driving currents due to superior heat conduction.

Conclusions:

Vertical InGaN LEDs fabricated with PSS and thinning techniques offer enhanced performance.
The design facilitates efficient light extraction and effective thermal management.
This approach presents a viable alternative to conventional lateral LEDs for high-power applications.