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Updated: May 15, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Bound states, electron localization and spin correlations in low-dimensional GaAs/AlGaAs quantum constrictions
I I Yakimenko1, V S Tsykunov, K-F Berggren
1Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden.
Abstract:
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the degree of localization is weak and we therefore observe only traces of partial electron localization in the middle of the QPC. In the pinch-off regime there is, however, distinct accumulation at the QPC edges. At the other end, strong confinement potential, low-electron density in the leads and top or implant gates favor electron localization. In such cases one may create a variety of electron configurations from a single localized electron to more complex structures with multiple rows and Wigner lattices.
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