Biasing of Metal-Semiconductor Junctions
The Electrical Double Layer
Bipolar Junction Transistor
Electrostatic Boundary Conditions in Dielectrics
Stereoisomerism
Switching of BJT
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Pramod P Pillai1, Krzysztof Pacławski, Jiwon Kim
1Department of Chemistry, Northwestern University, Evanston, IL 60208, USA.
Researchers created asymmetric nanorod arrays for advanced materials. These materials exhibit direction-dependent electrical properties, controllable by nanorod spacing.
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