Related Experiment Video
Updated: May 14, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Scattering by linear defects in graphene: a tight-binding approach
J N B Rodrigues1, N M R Peres, J M B Lopes dos Santos
1CFP and Departamento de Física e Astronomia, Faculdade de Ciências Universidade do Porto, P-4169-007 Porto, Portugal.
Abstract:
We develop an analytical scattering formalism for computing the transmittance through periodic defect lines within the tight-binding model of graphene. We first illustrate the method with a relatively simple case, the pentagon-only defect line. Afterwards, more complex defect lines are treated, namely the zz(558) and the zz(5757) ones. The formalism developed uses only simple tight-binding concepts, reducing the problem to matrix manipulations which can be easily worked out by any computational algebraic calculator.
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Point, Line and Plane Defects
The de Broglie Wavelength
X-ray Crystallography
Diffraction
Diffraction is the change in the direction of travel experienced by an electromagnetic wave when it encounters a physical barrier whose dimensions are comparable to those of the wavelength of the light. X-rays are electromagnetic radiation with wavelengths about as long as the distance between neighboring...
Debye–Huckel–Onsager Conductance Equation

