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Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
Published on: January 4, 2016
Organic vapor passivation of silicon at room temperature
Rong Yang1, Tonio Buonassisi, Karen K Gleason
1Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Advanced Materials (Deerfield Beach, Fla.)
|January 29, 2013
Abstract:
A simple, inexpensive, efficient, and scalable method to create air-stable organic surface passivation layers on silicon using a vapor-phase treatment is demonstrated. A variant of initiated chemical vapor deposition is used to synthesize a thin film that acts as both a passivation layer and an antireflective coating. The lowest surface recombination velocity reported to date is achieved and maintained during prolonged exposure to air.

