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Optimization, Test and Diagnostics of Miniaturized Hall Thrusters
Published on: February 16, 2019
Domain wall depinning governed by the spin Hall effect
P P J Haazen1, E Murè, J H Franken
1Department of Applied Physics, Center for NanoMaterials and COBRA Research Institute, Eindhoven University of Technology, Eindhoven, The Netherlands. pascal.haazen@gmail.com
Nature Materials
|February 5, 2013
Summary
We demonstrate the spin Hall effect as a novel method for controlling domain wall motion in perpendicularly magnetized materials. This offers precise manipulation for next-generation data, memory, and logic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Perpendicularly magnetized materials exhibit high anisotropy, leading to narrow domain walls.
- Current-induced domain wall motion (CIDWM) is a promising mechanism for advanced electronic devices.
Purpose of the Study:
- To propose and investigate the spin Hall effect as an alternative mechanism for CIDWM.
- To explore the relationship between domain wall structure and depinning efficiency.
Main Methods:
- Depinning experiments on Pt/Co/Pt nanowires.
- Tuning the net spin Hall current.
- Controlling domain wall internal structure using small applied fields.
Main Results:
- Successfully demonstrated CIDWM via the spin Hall effect.
- Showed that depinning efficiency is strongly dependent on domain wall internal structure.
- Established a link between applied fields, domain wall structure, and CIDWM.
Conclusions:
- The spin Hall effect provides a tunable method for CIDWM.
- Domain wall internal structure is a critical factor influencing depinning efficiency.
- This work offers new insights into CIDWM and resolves conflicting reports in the field.
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