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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Published on: May 24, 2020

Electrolyte-gated SmCoO3 thin-film transistors exhibiting thickness-dependent large switching ratio at room

Ping-Hua Xiang1, Shutaro Asanuma, Hiroyuki Yamada

  • 1National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8562, Japan.

Advanced Materials (Deerfield Beach, Fla.)
|February 6, 2013
PubMed

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