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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Carrier drift velocity and edge magnetoplasmons in graphene

I Petković1, F I B Williams, K Bennaceur

  • 1Service de Physique de l'État Condensé, Commissariat à l'Énergie Atomique, 91191 Gif-sur-Yvette, France. ivana.petkovic@yale.edu

Physical Review Letters
|February 7, 2013
PubMed

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