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Updated: May 14, 2026

Optimization, Test and Diagnostics of Miniaturized Hall Thrusters
Published on: February 16, 2019
Comparative study on the performance of five different Hall effect devices
Maria-Alexandra Paun1, Jean-Michel Sallese, Maher Kayal
1STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland. maria-alexandra.paun@epfl.ch
Abstract:
Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.
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