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Updated: May 14, 2026
12:22
Optimization, Test and Diagnostics of Miniaturized Hall Thrusters
Published on: February 16, 2019
Comparative study on the performance of five different Hall effect devices.
Maria-Alexandra Paun1, Jean-Michel Sallese, Maher Kayal
1STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland. maria-alexandra.paun@epfl.ch
Sensors (Basel, Switzerland)
|February 7, 2013
Summary
This study simulated five Hall Effect sensors, evaluating their performance and sensitivities. The findings help optimize Hall sensor design for maximum efficiency and performance in various applications.
Area of Science:
- Semiconductor device physics
- Sensor technology
Background:
- Hall Effect sensors are crucial for magnetic field detection.
- Optimizing sensor design is key to improving performance metrics.
Purpose of the Study:
- To model and evaluate the performance of five different Hall Effect sensors.
- To investigate the impact of design parameters on sensor sensitivity and offset.
- To provide guidance for optimizing Hall cell design and operating conditions.
Main Methods:
- Utilized a three-dimensional (3D) simulator for sensor modeling.
- Evaluated Hall voltage and various sensitivities (absolute, current-related, voltage-related, power-related).
- Investigated the effect of artificial offset in cross-like sensor structures.
Main Results:
- Performance metrics including Hall voltage and sensitivities were quantified for each sensor.
- The influence of artificial offset on cross-like structures was analyzed.
- Simulation data provides insights into optimal sensor geometry and polarization.
Conclusions:
- The simulation methodology aids in selecting optimal Hall cell shapes, dimensions, and polarization.
- This research contributes to the design of high-performance Hall Effect sensors.
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