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Low-temperature solution-processed hydrogen molybdenum and vanadium bronzes for an efficient hole-transport layer in
Fengxian Xie1, Wallace C H Choy, Chuandao Wang
1Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.
Advanced Materials (Deerfield Beach, Fla.)
|February 7, 2013
Abstract:
A simple one-step method is reported to synthesize low-temperature solution-processed transition metal oxides (TMOs) of molybdenum oxide and vanadium oxide with oxygen vacancies for a good hole-transport layer (HTL). The oxygen vacancy plays an essential role for TMOs when they are employed as HTLs: TMO films with excess oxygen are highly undesirable for their application in organic electronics.
