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Published on: May 11, 2019
Structural and optoelectronic characterization of RF sputtered ZnSnN(2)
Lise Lahourcade1, Naomi C Coronel, Kris T Delaney
1Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA.
Advanced Materials (Deerfield Beach, Fla.)
|February 7, 2013
Abstract:
ZnSnN(2), a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2(1) crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.
