Related Experiment Video
Updated: May 14, 2026
Development of a 3D Graphene Electrode Dielectrophoretic Device
Published on: June 22, 2014
Quantitatively enhanced reliability and uniformity of high-κ dielectrics on graphene enabled by self-assembled
Vinod K Sangwan1, Deep Jariwala, Stephen A Filippone
1Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
Abstract:
The full potential of graphene in integrated circuits can only be realized with a reliable ultrathin high-κ top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogeneous Al2O3 and HfO2 stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter β > 25) and large breakdown strengths (Weibull scale parameter, E(BD) > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates.
