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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators.

Elizabeth H Edwards1, Ross M Audet, Edward T Fei

  • 1Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA. ehe@alumni.stanford.edu

Optics Express
|February 8, 2013
PubMed
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We developed novel vertical-incidence electroabsorption modulators using Ge/SiGe quantum wells for optical interconnects. These devices achieve high-speed modulation with low energy consumption, promising for future data communication.

Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanotechnology

Background:

  • Free-space optical interconnects are crucial for high-speed data transfer.
  • Electroabsorption modulators are key components in optical communication systems.
  • Ge/SiGe quantum wells offer unique optoelectronic properties for device applications.

Purpose of the Study:

  • To demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects.
  • To leverage the quantum-confined Stark effect in Ge/SiGe quantum wells for modulator operation.
  • To achieve wide optical bandwidth operation without thermal tuning.

Main Methods:

  • Fabrication of Ge/SiGe quantum wells on silicon substrates using reduced pressure chemical vapor deposition.
  • Integration of a moderate-Q asymmetric Fabry-Perot resonant cavity via a film transfer process.

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  • Characterization of device performance including extinction ratio, insertion loss, modulation speed, and bandwidth.

    • Main Results:

    • Achieved extinction ratios of 3.4 dB (3 V) and 2.5 dB (1.5 V) with insertion loss < 4.5 dB.
    • Demonstrated large signal modulation at 2 Gbps for 60 µm diameter devices.
    • Observed a 3 dB modulation bandwidth of 3.5 GHz.

    Conclusions:

    • The developed modulators show promise for high-speed, low-energy free-space optical interconnects.
    • Further miniaturization could enhance device performance.
    • The use of resonant cavities enables wide bandwidth operation without thermal management.