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Updated: May 14, 2026

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
Published on: August 19, 2016
Self-organized periodic structures on Ge-S based chalcogenide glass induced by femtosecond laser irradiation
S H Messaddeq1, R Vallée, P Soucy
1Centre d'optique, photonique et laser, Université Laval, Québec, G1V 0A6 Canada. sandra.messaddeq@copl.ulaval.ca
Abstract:
Self-organized periodic structures have been observed on the surface of the ablation craters of Ge-S based chalcogenide glass produced after irradiation by a focused beam of a femtosecond Ti:sapphire laser (1 kHz, 34 fs, 806 nm). Scanning electron microscopy and atomic force microscopy images of irradiated spots show a periodic structure of ripples with a spatial period of 720 nm (close to the wavelength of fs laser pulses) and an alignment parallel to the electric field of light. With an increasing number of pulses, from 5 to 50 pulses, a characteristic evolution of ripples was observed from a random structure to a series of generally aligned peaks-and-valleys self-organized periodic structures. Additionally, at the center of the ablated spot, micro-domains appear where the ripples are still regular but are assembled in a more complex fashion. The experimental observations are interpreted in terms of strong temperature gradients combined with interference of the incident laser irradiation and a scattered surface electromagnetic wave.

