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A hybrid silicon single mode laser with a slotted feedback structure
Yejin Zhang1, Hongwei Qu, Hailing Wang
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. yjzhang@semi.ac.cn
Optics Express
|February 8, 2013
Summary
A novel hybrid laser combines III-V and silicon for photonic integration. This long-wavelength device uses a slotted silicon waveguide for mode selection, achieving over 20dB side mode suppression.
Area of Science:
- Photonics
- Materials Science
- Electrical Engineering
Background:
- Photonic integration circuits (PICs) require efficient light sources.
- Hybrid integration of III-V materials with silicon photonics offers advantages in performance and scalability.
- Long-wavelength lasers are crucial for optical communication systems.
Purpose of the Study:
- To present a III-V/Silicon hybrid single mode laser operating at a long wavelength.
- To demonstrate a novel mode selection mechanism for photonic integration.
- To achieve high side mode suppression ratio (SMSR) using standard fabrication processes.
Main Methods:
- Direct bonding of an InGaAlAs gain structure onto a patterned silicon-on-insulator (SOI) wafer.
- Implementation of a mode selection mechanism utilizing a slotted silicon waveguide.
- Utilizing standard photolithography for the entire technological process.
Main Results:
- Successful fabrication of a III-V/Silicon hybrid single mode laser.
- Demonstration of a novel mode selection mechanism based on slotted silicon waveguides.
- Experimental achievement of a side mode suppression ratio greater than 20dB.
Conclusions:
- The presented hybrid laser is suitable for photonic integration circuits.
- The slotted silicon waveguide offers an effective and simple mode selection solution.
- This approach enables cost-effective fabrication of high-performance photonic devices.

