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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Published on: July 17, 2015

Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures.

Emre Sari1, Lee Woon Jang, Jong Hyeob Baek

  • 1Department of Electrical and Electronics Engineering, UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara, Turkey.

Optics Express
|February 8, 2013
PubMed
Summary
This summary is machine-generated.

Epitaxial lateral overgrowth (ELOG) enhances electroabsorption (EA) in InGaN/GaN quantum structures. Narrower mask stripes improve EA performance, showing it’s highly sensitive to growth parameters.

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Optoelectronics

Background:

  • Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) quantum structures are crucial for optoelectronic devices.
  • Defects like dislocations significantly impact material properties and device performance.
  • Epitaxial Lateral Overgrowth (ELOG) is a technique used to reduce defect density in semiconductor growth.

Purpose of the Study:

  • To investigate the electroabsorption (EA) properties of InGaN/GaN quantum structures grown by ELOG.
  • To correlate EA behavior with dislocation density and compare it with photoluminescence (PL) measurements.
  • To determine the influence of ELOG mask stripe widths on EA performance.

Main Methods:

  • Growth of InGaN/GaN quantum structures using Epitaxial Lateral Overgrowth (ELOG) with varying mask stripe widths.
  • Characterization of electroabsorption (EA) properties.
  • Steady-state and time-resolved photoluminescence (PL) measurements to assess material quality and defect levels.

Main Results:

  • ELOG structures with reduced mask stripe widths showed significantly enhanced EA performance, with a maximum enhancement factor of 4.8.
  • EA performance correlated positively with decreasing dislocation density, mirroring trends observed in PL spectra (peak position, width, intensity) and lifetimes.
  • Electroabsorption exhibited greater sensitivity to mask stripe widths compared to photoluminescence, even when growth window widths were constant.

Conclusions:

  • ELOG is an effective technique for improving the electroabsorption characteristics of InGaN/GaN quantum structures.
  • Electroabsorption is a highly sensitive probe for evaluating the impact of growth parameters, particularly mask stripe width, on InGaN/GaN quantum structures.
  • Optimizing ELOG parameters, specifically mask stripe width, is critical for maximizing EA performance in these quantum structures.