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Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

Emre Sari1, Lee Woon Jang, Jong Hyeob Baek

  • 1Department of Electrical and Electronics Engineering, UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara, Turkey.

Optics Express
|February 8, 2013
PubMed

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