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Updated: May 14, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Direct bandgap narrowing in Ge LED's on Si substrates

Michael Oehme1, Martin Gollhofer, Daniel Widmann

  • 1Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart, Germany. oehme@iht.uni-stuttgart.de

Optics Express
|February 8, 2013
PubMed

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