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Related Experiment Video

Updated: May 14, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

1.56 µm 1 watt single frequency semiconductor disk laser.

Antti Rantamäki1, Jussi Rautiainen, Alexei Sirbu

  • 1Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland. antti.rantamaki@tut.fi

Optics Express
|February 8, 2013
PubMed
Summary

A novel wafer-fused semiconductor disk laser achieves 1 watt output power at 1.56 µm with over 5 km coherence length. This breakthrough offers significant potential for high-power, narrow-line laser applications.

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Area of Science:

  • Optics and Photonics
  • Semiconductor Lasers
  • Materials Science

Background:

  • Semiconductor disk lasers (SDLs) are crucial for various applications due to their scalability.
  • Achieving high output power and long coherence length simultaneously in narrow-line SDLs remains a challenge.
  • The 1.3-1.6 µm spectral range is important for telecommunications and sensing.

Purpose of the Study:

  • To demonstrate a single-frequency wafer-fused semiconductor disk laser.
  • To achieve high output power and long coherence length at 1.56 µm.
  • To investigate the potential of wafer fusion for power scaling of vertical-cavity lasers.

Main Methods:

  • Wafer fusion technique applied to semiconductor disk laser fabrication.
  • Characterization of output power, spectral properties, and coherence length.

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  • Operation at the 1.56 µm wavelength.

    • Main Results:

    • Demonstration of a single-frequency wafer-fused semiconductor disk laser.
    • Achieved 1 watt of output power at 1.56 µm.
    • Measured coherence length exceeding 5 km in fiber.

    Conclusions:

    • The wafer fusion technique enables significant power scaling for narrow-line semiconductor disk lasers.
    • The demonstrated laser represents the highest output power for this type of laser in the 1.3-1.6 µm range.
    • This technology holds promise for future high-power laser systems in the 1.3-1.6 µm spectral region.