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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Overview of Cell-Matrix Interactions01:24

Overview of Cell-Matrix Interactions

The extracellular matrix or ECM holds cells together to form a tissue and allows the cells within the tissue to communicate. ECM comprises proteins such as fibronectin, collagen, laminin, etc. The most abundant protein in this space is collagen. Collagen fibers are interwoven with carbohydrate-containing protein molecules called proteoglycans. ECM allows cell migration and provides a structural scaffold at cell adhesion that anchors the cell when the extracellular matrix proteins interact with...

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Related Experiment Video

Updated: May 14, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.

G W Shu1, J Y Lin, H T Jian

  • 1Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan.

Optics Express
|February 8, 2013
PubMed
Summary
This summary is machine-generated.

Investigating triple-junction solar cells revealed subcell coupling effects. Infrared light below the top subcell

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Area of Science:

  • Semiconductor physics
  • Optoelectronics
  • Materials science

Background:

  • Triple-junction solar cells (TJSCs) are advanced photovoltaic devices.
  • Understanding subcell interactions is crucial for optimizing TJSC performance.
  • Electroluminescence (EL) imaging is a powerful tool for analyzing device physics.

Purpose of the Study:

  • To investigate the subcell coupling effect in InGaP/InGaAs/Ge solar cells using spatially-resolved electroluminescence.
  • To elucidate the mechanisms behind electroluminescence quenching under specific infrared irradiation.
  • To explore the potential application of observed phenomena in infrared image sensors.

Main Methods:

  • Spatially-resolved electroluminescence (EL) imaging of a triple-junction InGaP/InGaAs/Ge solar cell.
  • Controlled irradiation with infrared light tuned to specific energy levels relative to subcell bandgaps.
  • Analysis of EL intensity variations as a function of infrared irradiation intensity.

Main Results:

  • Electroluminescence (EL) of the top subcell was observed to quench when irradiated with infrared light below the top subcell's bandgap but above the middle subcell's bandgap.
  • The observed EL quenching is attributed to the coupled p-n junction structure and the photovoltaic effect within the solar cell.
  • The study demonstrates a clear correlation between irradiation level and the degree of EL quenching.

Conclusions:

  • Subcell coupling significantly impacts the optoelectronic behavior of triple-junction solar cells.
  • The interplay between optical coupling and photovoltaic effects can lead to phenomena like EL quenching.
  • The findings suggest a novel concept for developing infrared image sensors based on multi-junction diodes and photoswitching effects.