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Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells
1Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan.
Optics Express
|February 8, 2013
Summary
Investigating triple-junction solar cells revealed subcell coupling effects. Infrared light below the top subcell
Area of Science:
- Semiconductor physics
- Optoelectronics
- Materials science
Background:
- Triple-junction solar cells (TJSCs) are advanced photovoltaic devices.
- Understanding subcell interactions is crucial for optimizing TJSC performance.
- Electroluminescence (EL) imaging is a powerful tool for analyzing device physics.
Purpose of the Study:
- To investigate the subcell coupling effect in InGaP/InGaAs/Ge solar cells using spatially-resolved electroluminescence.
- To elucidate the mechanisms behind electroluminescence quenching under specific infrared irradiation.
- To explore the potential application of observed phenomena in infrared image sensors.
Main Methods:
- Spatially-resolved electroluminescence (EL) imaging of a triple-junction InGaP/InGaAs/Ge solar cell.
- Controlled irradiation with infrared light tuned to specific energy levels relative to subcell bandgaps.
- Analysis of EL intensity variations as a function of infrared irradiation intensity.
Main Results:
- Electroluminescence (EL) of the top subcell was observed to quench when irradiated with infrared light below the top subcell's bandgap but above the middle subcell's bandgap.
- The observed EL quenching is attributed to the coupled p-n junction structure and the photovoltaic effect within the solar cell.
- The study demonstrates a clear correlation between irradiation level and the degree of EL quenching.
Conclusions:
- Subcell coupling significantly impacts the optoelectronic behavior of triple-junction solar cells.
- The interplay between optical coupling and photovoltaic effects can lead to phenomena like EL quenching.
- The findings suggest a novel concept for developing infrared image sensors based on multi-junction diodes and photoswitching effects.
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