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Updated: May 14, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes
Yuji Zhao1, Qimin Yan, Daniel Feezell
1Electrical Computer and Engineering Department, University of California, Santa Barbara, California 93106, USA. yujizhao@engineering.ucsb.edu
Abstract:
Linear polarized electroluminescence was investigated for semipolar (3031) and (3031) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k?p method for the above two planes. The theoretical calculations are consistent with the experimental results.
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