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Updated: May 14, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Fabiola Iacono1, Cristina Palencia, Leonor de la Cueva
1Departamento de Física de la Materia Condensada and Instituto Nicolás Cabrera, Facultad de Ciencias, Universidad Autónoma de Madrid, UAM, Avd. Fco. Tomás y Valiente 7, 28049 Madrid, Spain.
Stronger interfaces enhance semiconductor nanocrystal (NC) device performance. Substituting long organic chains with chlorine ligands promotes NC adsorption to carbon surfaces, forming ordered monolayers.
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