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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

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Related Experiment Video

Updated: May 14, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors.

Jie Meng1, Han-Chun Wu, Jing-Jing Chen

  • 1State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, PR China.

Small (Weinheim an Der Bergstrasse, Germany)
|February 13, 2013
PubMed
Summary

Photons can control graphene memory devices by altering charge transfer. Ultraviolet light significantly enlarges the hysteresis in graphene field-effect transistors, enhancing memory capabilities.

Keywords:
field-effect transistorsgraphenehysteresisphotoelectrical responsestrap states

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Graphene field-effect transistors (GFETs) exhibit memory effects.
  • Controlling charge transfer is key to device functionality.
  • Photon-induced effects on graphene are an area of active research.

Purpose of the Study:

  • To demonstrate photon-based control of graphene memory devices.
  • To investigate the impact of ultraviolet (UV) irradiation on GFET characteristics.
  • To understand the underlying charge-transfer mechanisms.

Main Methods:

  • Utilizing gate-voltage pulses to program and erase memory elements in GFETs.
  • Irradiating GFETs with ultraviolet light in both air and vacuum environments.
  • Analyzing the conductance-gate voltage dependence to observe hysteresis changes.

Main Results:

  • Photon-induced control of graphene memory devices was successfully demonstrated.
  • Ultraviolet irradiation significantly enlarged the hysteresis in the conductance-gate voltage dependence of GFETs.
  • The observed effects were consistent in both air and vacuum.

Conclusions:

  • Photonics offers a viable method for controlling graphene memory devices.
  • UV illumination enhances the memory characteristics of GFETs by modifying charge transfer.
  • The proposed mechanism involves enhanced charge transfer between graphene and its surroundings upon UV exposure.