Observation of an intermediate band in Sn-doped chalcopyrites with wide-spectrum solar response
Chongyin Yang1, Mingsheng Qin, Yaoming Wang
1CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P R China.
Abstract:
Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS(2)) and ~0.8 eV (CuInS(2)) above the valance band maximum in the forbidden band gap. Diffuse reflection spectra and photoluminescence spectra reveal extra absorption and emission spectra induced by the IBs, which are further supported by first-principle calculations. Wide spectrum solar response greatly enhances photocatalysis, photovoltaics, and photo-induced hydrogen production due to the intermediate band.
Related Concept Videos
UV–Vis Spectroscopy: Woodward–Fieser Rules
UV–Vis Spectrometers


