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Updated: May 14, 2026
Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
On demand shape-selective integration of individual vertical germanium nanowires on a Si(111) substrate via
Sang-Gil Ryu1, Eunpa Kim, Jae-Hyuck Yoo
1Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States.
Abstract:
Semiconductor nanowire (NW) synthesis methods by blanket furnace heating produce structures of uniform size and shape. This study overcomes this constraint by applying laser-localized synthesis on catalytic nanodots defined by electron beam lithography in order to accomplish site- and shape-selective direct integration of vertically oriented germanium nanowires (GeNWs) on a single Si(111) substrate. Since the laser-induced local temperature field drives the growth process, each NW could be synthesized with distinctly different geometric features. The NW shape was dialed on demand, ranging from cylindrical to hexagonal/irregular hexagonal pyramid. Finite difference time domain analysis supported the tunability of the light absorption and scattering spectra via controlling the GeNW shape.
