Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Cut-off Frequency of BJT01:17

Cut-off Frequency of BJT

Cut-off frequencies in Bipolar Junction Transistors (BJTs) mark the transition between the signal's pass band and stop band, influencing their performance in amplifying or attenuating frequencies. These frequencies are crucial for designing BJTs to meet specific operational requirements in electronic circuits.
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Influence of Personalized Advice on Cardiovascular Management in Childhood Cancer Survivors.

Journal of adolescent and young adult oncology·2026
Same author

Icariin suppresses glycolysis in prostate cancer by upregulating ALKBH5 to mediate EARS2 m<sup>6</sup>A demethylation.

Journal of molecular histology·2026
Same author

Splenectomy in β-thalassemia patients: Practices and risks in a nationwide study.

HemaSphere·2026
Same author

Interfacial Coupling Controls Molecular Epitaxy of HMTP on Graphene/SiC.

ACS applied materials & interfaces·2026
Same author

Lymphatic Vessels are Involved in Monosodium Urate Clearance and Resolution of Gouty Inflammation in Mice.

Journal of inflammation research·2026
Same author

Ensuring equitable access to information after pediatric cancer: Ethical perspectives from the E-QuoL project.

Bulletin du cancer·2026

Related Experiment Video

Updated: May 14, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Record maximum oscillation frequency in C-face epitaxial graphene transistors.

Zelei Guo1, Rui Dong, Partha Sarathi Chakraborty

  • 1School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

Nano Letters
|February 20, 2013
PubMed
Summary

Researchers achieved a record maximum oscillation frequency (fmax) of 70 GHz in transistors using C-face epitaxial graphene. This breakthrough highlights C-face graphene

More Related Videos

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Related Experiment Videos

Last Updated: May 14, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid-State Physics

Background:

  • The maximum oscillation frequency (fmax) is a critical parameter defining the operational limit of electronic circuits.
  • Previous high-frequency transistor research primarily utilized silicon-face (Si-face) epitaxial graphene.
  • Exploring alternative graphene growth substrates is essential for advancing high-frequency electronics.

Purpose of the Study:

  • To report a record maximum oscillation frequency (fmax) in transistors fabricated with epitaxial graphene.
  • To investigate the high-frequency performance potential of epitaxial graphene grown on the carbon-face (C-face) of silicon carbide (SiC).
  • To demonstrate the advantages of C-face epitaxial graphene over Si-face for advanced electronic applications.

Main Methods:

  • Epitaxial growth of graphene on the C-face of SiC.
  • Fabrication of transistors incorporating a high κ dielectric T-gate structure.
  • Implementation of self-aligned contacts for optimized device performance.
  • Measurement and characterization of transistor oscillation frequency.

Main Results:

  • Achieved a record maximum oscillation frequency (fmax) of 70 GHz.
  • Demonstrated significantly improved high-frequency performance compared to devices using Si-face epitaxial graphene.
  • Confirmed the superior electronic properties of C-face epitaxial graphene for high-frequency applications.
  • Highlighted the role of advanced transistor design (T-gate, self-aligned contacts) in achieving record fmax.

Conclusions:

  • C-face epitaxial graphene offers superior electronic performance for high-frequency transistors.
  • The achieved 70 GHz fmax represents a significant advancement in graphene-based electronics.
  • Optimized device design is crucial for realizing the full potential of advanced materials like C-face epitaxial graphene.