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Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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Types of Reversible Electrodes

For electrode reversibility to be maintained, all the reactants and products involved in the half-reaction must be present at the electrode. There are several types of reversible electrodes (half-cells).In metal-metal-ion electrodes, a metal balances electrochemically with a solution of its own ions. Examples are Cu2+|Cu and Zn2+|Zn. Metals that react with the solvent, like group 1 and most group 2 metals, which react with water, and zinc, which reacts with aqueous acidic solutions, cannot be...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
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Resting Membrane Potential01:24

Resting Membrane Potential

The relative difference in electrical charge, or voltage, between the inside and the outside of a cell membrane, is called the membrane potential. It is generated by differences in permeability of the membrane to various ions and the concentrations of these ions across the membrane.
The Inside of a Neuron is More Negative
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Excellent ferroelectricity of thin poly(vinylidene fluoride-trifluoroethylene) copolymer films and low voltage operation of capacitors and diodes.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control·2008
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Ferroelectric random access memories.

Hiroshi Ishiwara1

  • 1Department of Physics, Division of Quantum Phases and Devices, Konkuk University, Seoul 143-701, Republic of Korea.

Journal of Nanoscience and Nanotechnology
|February 21, 2013
PubMed
Summary

Ferroelectric random-access memory (FeRAM) stores data using ferroelectric film properties. Capacitor-type FeRAMs are commercially available, with ongoing research into high-density memory materials and optimized transistor structures.

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid State Physics

Background:

  • Ferroelectric random-access memory (FeRAM) utilizes the hysteretic polarization-electric field (P-E) characteristics of ferroelectric films for nonvolatile data storage.
  • Two primary FeRAM types exist: capacitor-type and field-effect transistor (FET)-type, with capacitor-type currently dominating commercial applications.

Purpose of the Study:

  • To provide a comprehensive review of FeRAM history, characteristics, and material properties.
  • To discuss cell structures, operation principles, and advancements in high-density FeRAM fabrication.
  • To explore optimized gate structures in ferroelectric-gate FETs and their data retention capabilities.

Main Methods:

  • Review of historical development and fundamental properties of FeRAM technologies.

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  • Analysis of ferroelectric film properties, focusing on Pb(Zr,Ti)O3, SrBi2Ta2O9, and BiFeO3.
  • Discussion of capacitor-type FeRAM cell structures and operational principles.
  • Examination of optimized gate structures in ferroelectric-gate FETs.

    • Main Results:

    • Capacitor-type FeRAMs are the only commercially available type.
    • Stacked capacitor technology and development of materials with high remanent polarization are crucial for high-density memory fabrication.
    • Optimized gate structures in ferroelectric-gate FETs demonstrate excellent data retention characteristics.

    Conclusions:

    • FeRAM technology relies on the unique properties of ferroelectric materials.
    • Advancements in material science and device engineering are key to realizing high-density, high-performance FeRAM.
    • Ferroelectric-gate FETs show promise for future nonvolatile memory applications due to their data retention.