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Design of side bottom-electrode-contact for high density phase-change memory array.

Yan Liu¹, Zhitang Song, Bo Liu

¹State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.

Journal of Nanoscience and Nanotechnology

|February 21, 2013

Summary

A novel side bottom-electrode-contact (BEC) scheme for phase-change memory (PCM) doubles data storage capacity. This advanced design reduces cell size and programming power while ensuring crosstalk immunity in high-density memory arrays.

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Area of Science:

Materials Science
Electrical Engineering
Semiconductor Devices

Background:

Traditional phase-change memory (PCM) structures face limitations in data storage density and cell size.
Compatibility with complementary metal-oxide-semiconductor (CMOS) technology is crucial for advanced memory integration.

Purpose of the Study:

To propose and evaluate a high-density PCM array using an advanced side bottom-electrode-contact (BEC) scheme.
To enhance data storage capacity and improve the performance of PCM cells.

Main Methods:

Implementation of a side BEC scheme compatible with current CMOS technology.
Optimization of titanium nitride (TiN) film thickness for the side BEC.
Utilizing a three-dimensional (3D) numerical model for simulation and analysis.

Main Results:

Doubled data storage capacity compared to orthodox PCM structures.
Reduced contact area from 20096 nm² to 600 nm².
Achieved lower SET (0.06 mA) and RESET (0.24 mA) currents.
Demonstrated a high resistance ratio of 10³ between amorphous and crystalline phases.
Confirmed crosstalk immunity in adjacent PCM cells.

Conclusions:

The proposed side BEC scheme offers a cost-effective solution for high-density PCM arrays.
Optimized TiN side BEC thickness (10 nm) balances RESET current and SET resistance.
The design minimizes programming power and enhances overall PCM performance.