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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Effect of electrode materials on AlN-based bipolar and complementary resistive switching
Chao Chen1, Shuang Gao, Guangsheng Tang
1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
Aluminum nitride (AlN) based devices show complementary resistive switching (CRS) for passive crossbar arrays. Stable CRS requires the reset voltage to be significantly larger than half the set voltage.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Resistive switching memory offers potential for high-density data storage.
- Aluminum nitride (AlN) is explored as a novel material for resistive switching devices.
- Complementary resistive switching (CRS) is investigated for large-scale integration.
Purpose of the Study:
- To demonstrate complementary resistive switching (CRS) behaviors in aluminum nitride (AlN)-based memory devices.
- To investigate the influence of different electrode materials (Cu, Pt, TiN) on CRS characteristics.
- To analyze the stability of CRS and identify prerequisites for reliable operation.
Main Methods:
- Fabrication of TiN/AlN/Cu/AlN/TiN electrochemical metallization cells.
- Fabrication of Pt/AlN/TiN/AlN/Pt ionic resistive switching systems.
- Characterization of resistive switching behaviors and analysis of switching parameters.
Main Results:
- Complementary resistive switching (CRS) characteristics were successfully demonstrated in AlN-based devices with different electrode configurations.
- Electrochemical metallization cells (TiN/AlN/Cu/AlN/TiN) and ionic resistive switching systems (Pt/AlN/TiN/AlN/Pt) exhibited CRS.
- Instability in Pt/AlN/Cu/AlN/Pt devices was attributed to thermal effects enhancing the reset process at lower reset voltages.
Conclusions:
- Aluminum nitride (AlN) is a viable material system for developing complementary resistive switching (CRS) memory devices.
- Device stability is critically dependent on the relationship between set and reset voltages.
- Reliable and stable CRS requires the reset voltage to be substantially greater than half the set voltage for the bipolar resistive switching element.
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