Effect of electrode materials on AlN-based bipolar and complementary resistive switching

Chao Chen1, Shuang Gao, Guangsheng Tang

  • 1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.

Summary

Aluminum nitride (AlN) based devices show complementary resistive switching (CRS) for passive crossbar arrays. Stable CRS requires the reset voltage to be significantly larger than half the set voltage.

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