Strain induced chemical potential difference between monolayer graphene sheets

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Yupeng Zhang1, Chengzhi Luo, Weiping Li

  • 1School of Physics and Technology, MOE Key Laboratory of Artificial Micro- and Nano-structures, Wuhan University, Wuhan 430072, China.

Nanoscale
|February 22, 2013
PubMed

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