Improved efficiency of inverted organic light-emitting diodes using tin dioxide nanoparticles as an electron
Hyunkoo Lee1, Chan-Mo Kang, Myeongjin Park
1Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea.
Abstract:
We demonstrated highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) using tin dioxide (SnO2) nanoparticles (NPs) as an electron injection layer at the interface between the indium tin oxide (ITO) cathode and the organic electron transport layer. The SnO2 NP layer can facilitate the electron injection since the conduction band energy level of SnO2 NPs (-3.6 eV) is located between the work function of ITO (4.8 eV) and the lowest unoccupied molecular orbital (LUMO) energy level of typical electron transporting molecules (-2.5 to -3.5 eV). As a result, the IBOLEDs with the SnO2 NPs exhibited a decrease of the driving voltage by 7 V at 1000 cd/m(2) compared to the device without SnO2 NPs. They also showed a significantly enhanced luminous current efficiency of 51.1 cd/A (corresponds to the external quantum efficiency of 15.6%) at the same brightness, which is about two times higher values than that of the device without SnO2 NPs. We also measured the angular dependence of irradiance and electroluminescence (EL) spectra in the devices with SnO2 NPs and found that they had a nearly Lambertian emission profile and few shift in EL spectrum through the entire viewing angles, which are considered as remarkable and essential results for the application of OLEDs to display devices.
