Related Experiment Video
Updated: May 13, 2026

Iron Nanowire Fabrication by Nano-Porous Anodized Aluminum and its Characterization
Published on: October 6, 2019
Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts
Arndt von Bieren1, Ajit K Patra, Stephen Krzyk
1Laboratory for Nanomagnetism and Spin Dynamics, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
Abstract:
We determine magnetoresistance effects in stable and clean Permalloy nanocontacts of variable cross section, fabricated by UHV deposition and in situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a magnetic domain wall, we measure the resistance values with and without such a wall at zero applied field. In the ballistic transport regime, the MR ratio reaches up to 50% and exhibits a previously unobserved sign change. Our results can be reproduced by recent atomistic calculations for different atomic configurations of the nanocontact, highlighting the importance of the detailed atomic arrangement for the MR effect.
More Related Videos
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
07:42Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains
Published on: July 20, 2022
Related Concept Videos
The Hall Effect
Ferromagnetism
Diamagnetism
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets.
Magnetic Fields
A magnetic field is defined by the force that a charged particle experiences...
Magnetostatic Boundary Conditions
Diamagnetic Shielding of Nuclei: Local Diamagnetic Current