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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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Embedding plasmonic nanostructure diodes enhances hot electron emission.

Mark W Knight1, Yumin Wang, Alexander S Urban

  • 1Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States.

Nano Letters
|March 5, 2013
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Embedding plasmonic nanostructures into semiconductors significantly boosts hot electron emission, increasing photocurrent responsivity by 25× for enhanced plasmonic nanostructure-diode devices.

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Last Updated: May 13, 2026

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
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Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

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Area of Science:

  • Nanophotonics
  • Plasmonics
  • Semiconductor devices

Background:

  • Plasmon decay in metal-semiconductor interfaces generates hot electrons, creating photocurrents.
  • Planar configurations limit hot electron transport across the Schottky barrier.

Purpose of the Study:

  • To investigate the impact of embedding plasmonic nanostructures within semiconductors on hot electron emission.
  • To enhance photocurrent generation in plasmonic nanostructure-diode devices.

Main Methods:

  • Fabrication of devices with embedded plasmonic nanostructures at varying depths.
  • Measurement of photocurrent responsivity in different device geometries.
  • Analysis of hot electron transport across vertical Schottky barriers.

Main Results:

  • Embedding plasmonic structures increased hot electron emission substantially.
  • Responsivity improved by 25× compared to planar diodes, even at 5 nm embedding depths.
  • Vertical Schottky barriers facilitated dominant plasmon-induced hot electron photocurrent.

Conclusions:

  • Embedding plasmonic nanostructures is a highly effective strategy to enhance hot electron emission and photocurrent generation.
  • This geometry optimizes hot electron transport, making plasmon-induced effects the primary photocurrent contributor.
  • The findings pave the way for more efficient plasmonic nanostructure-based optoelectronic devices.