Updated: May 13, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
1MOE Key Laboratory of Laser Life Science & Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, China. xlli@scnu.edu.cn
A new theoretical model explains quantum dot (QD) formation on patterned substrates, linking preferred sites to surface potential and wetting layer thickness. Growth conditions and patterns can control QD placement for better understanding and application.
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