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Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Related Experiment Video

Updated: May 13, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

Ji-Hyeon Park1, Min-Hee Kim, Suthan Kissinger

  • 1Semiconductor Materials and Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development, Chonbuk National University, Jeonju, 561-756, South Korea.

Nanoscale
|March 5, 2013
PubMed
Summary

Gallium nitride (GaN) nanowire arrays were fabricated using a two-step MOCVD process. These n-GaN:Si/p-GaN:Mg nanowire diodes exhibit excellent rectifying properties, showing potential for light-emitting nanodevices.

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Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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Last Updated: May 13, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Gallium nitride (GaN) is a crucial semiconductor material for optoelectronic devices.
  • Developing efficient fabrication methods for GaN-based nanostructures is essential for next-generation electronics.
  • Nanowire arrays offer unique properties for enhanced device performance.

Purpose of the Study:

  • To demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on a silicon substrate.
  • To investigate the structural, optical, and electrical properties of these GaN nanowire diodes.
  • To explore the potential of these nanostructures in light-emitting nanodevices.

Main Methods:

  • Metal-Organic Chemical Vapor Deposition (MOCVD) using a two-step growth process.
  • Structural characterization via X-ray Diffraction (XRD) and High-Resolution Transmission Electron Microscopy (HRTEM).
  • Optical characterization using room-temperature photoluminescence and Cathodoluminescence (CL).
  • Fabrication of nano-diodes with Au/Ni metal contacts and current-voltage (I-V) measurements.

Main Results:

  • Successfully fabricated n-GaN:Si/p-GaN:Mg nanowire arrays with diameters of 300-400 nm and high density.
  • XRD and HRTEM confirmed the nanowires are relatively defect-free.
  • Photoluminescence showed a strong peak at 370 nm, indicating suitability for light-emitting applications.
  • Current-voltage measurements revealed excellent rectifying behavior with a turn-on voltage of 1.6 V at a specific Mg flow rate.

Conclusions:

  • The demonstrated MOCVD method is effective for producing high-quality GaN nanowire arrays.
  • The fabricated n-GaN:Si/p-GaN:Mg nanowire diodes exhibit promising optoelectronic properties.
  • These nanowire arrays hold significant potential for the development of advanced light-emitting nanodevices.