Optical properties of GaN-based nanowires containing a single Al(0.14)Ga(0.86)N/GaN quantum disc

G Jacopin1, L Rigutti, J Teubert

  • 1Institut d'Electronique Fondamentale, University Paris Sud, UMR 8622 CNRS, F-91405 Orsay, France. gwenole.jacopin@epfl.ch

Nanotechnology
|March 6, 2013
PubMed

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