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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Published on: November 15, 2013

Direct band gap wurtzite gallium phosphide nanowires

S Assali1, I Zardo, S Plissard

  • 1Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands.

Nano Letters
|March 8, 2013
PubMed
Summary

Researchers fabricated hexagonal gallium phosphide (GaP) nanowires, achieving efficient green light emission. This crystal structure engineering overcomes limitations of traditional GaP, enabling tunable wavelengths for enhanced device functionality.

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