Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: May 13, 2026

Observation and Analysis of Blinking Surface-enhanced Raman Scattering
05:52

Observation and Analysis of Blinking Surface-enhanced Raman Scattering

Published on: January 11, 2018

Fast current blinking in individual PbS and CdSe quantum dots.

Klara Maturova1, Sanjini U Nanayakkara, Joseph M Luther

  • 1Chemical and Materials Science Center, National Renewable Energy Laboratory, Golden, Colorado 80401, USA.

Nano Letters
|March 12, 2013
PubMed
Summary

Researchers observed fast current intermittency in single semiconductor quantum dots using advanced microscopy. This intermittent current switching is linked to Coulomb blockade effects, impacting charge transport studies.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

In-Situ Ligand-Induced Chirality Transfer in Emissive CdSe Nanoplatelets.

The journal of physical chemistry letters·2026
Same author

Polariton Control of Molecular Charge Transfer in Perylene Diimide Semiconductors.

The journal of physical chemistry letters·2026
Same author

Toward Fullerene-Free PIN Perovskite Solar Cells.

ACS energy letters·2025
Same author

Layer Number Dependence of Chirality and Spin Polarized Lifetime in Chiral 2D Halide Perovskites.

Journal of the American Chemical Society·2025
Same author

Full Device Evaluation of Metal Halide Perovskite Solar Cells in Low Earth Orbit Aboard the International Space Station.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Ultrafast inverse chirality-induced spin selectivity observed by THz emission.

Science (New York, N.Y.)·2025

Area of Science:

  • Condensed matter physics
  • Nanotechnology
  • Quantum phenomena

Background:

  • Semiconductor quantum dots exhibit unique electronic properties.
  • Understanding charge transport at the single-dot level is crucial for quantum technologies.
  • Current intermittency in nanoscale devices is a key phenomenon.

Purpose of the Study:

  • To investigate the fast current intermittency in single semiconductor quantum dots.
  • To elucidate the underlying mechanisms of current switching, including Coulomb blockade.
  • To explore the influence of illumination on current intermittency.

Main Methods:

  • Utilized time-resolved intermittent contact conductive atomic force microscopy (ic-CAFM).
  • Performed measurements in the dark and under illumination at room temperature.

More Related Videos

Compact Quantum Dots for Single-molecule Imaging
17:14

Compact Quantum Dots for Single-molecule Imaging

Published on: October 9, 2012

Related Experiment Videos

Last Updated: May 13, 2026

Observation and Analysis of Blinking Surface-enhanced Raman Scattering
05:52

Observation and Analysis of Blinking Surface-enhanced Raman Scattering

Published on: January 11, 2018

Compact Quantum Dots for Single-molecule Imaging
17:14

Compact Quantum Dots for Single-molecule Imaging

Published on: October 9, 2012

  • Analyzed current switching dynamics, including on/off times and their distributions.
  • Main Results:

    • Observed fast current intermittency (microseconds to seconds) in single quantum dots.
    • Demonstrated power-law distributions for both current on and off times.
    • Attributed on-states to resonant tunneling and off-states to Coulomb blockade effects.

    Conclusions:

    • Coulomb blockade significantly influences carrier transport in single quantum dots.
    • Current intermittency provides insights into charge trapping and energy level shifts.
    • Findings have implications for designing and understanding quantum dot arrays and devices.