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Updated: May 13, 2026

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Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching.

Jun Ma1, Liancheng Wang, Zhiqiang Liu

  • 1Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Optics Express
|March 14, 2013
PubMed
Summary

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Researchers developed new nitride-based hexagonal pyramids array (HPA) vertical-injection light emitting diodes (V-LEDs) using N-polar wet etching. These HPA V-LEDs show significantly improved efficiency and reduced leakage current compared to conventional designs.

Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Conventional vertical-injection light emitting diodes (V-LEDs) face challenges with efficiency and performance limitations.
  • Surface texturing is a common method to enhance light extraction, but often introduces defects.
  • Nitride-based semiconductors are crucial for optoelectronic devices, but their fabrication requires precise control.

Purpose of the Study:

  • To fabricate novel nitride-based hexagonal pyramids array (HPA) V-LEDs.
  • To investigate the performance improvements achieved by the HPA structure.
  • To analyze the impact of N-polar wet etching on device characteristics and crystal quality.

Main Methods:

  • Fabrication of HPA V-LEDs using N-polar wet etching.

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  • Performance characterization including internal quantum efficiency and light extraction efficiency.
  • Simulation of light extraction using the finite difference time domain (FDTD) method.
  • Crystal quality assessment using conductive atomic force microscopy (CAFM).

    • Main Results:

    • Achieved a 30% higher internal quantum efficiency in HPA V-LEDs compared to conventional roughened V-LEDs.
    • Simulated extraction efficiency was 20% higher for HPA V-LEDs than for typical roughened V-LEDs.
    • Reduced reversed leakage current due to improved crystal quality, confirmed by CAFM.
    • Substantially alleviated efficiency droop in HPA V-LEDs.

    Conclusions:

    • N-polar wet etching enables the fabrication of HPA V-LEDs with significantly enhanced performance.
    • The HPA structure improves internal quantum efficiency, light extraction, and reduces leakage current.
    • HPA V-LEDs offer a promising pathway for high-performance optoelectronic devices with reduced efficiency droop.