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Published on: December 3, 2013
Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells
Elad Gross1, Amir Nevet, Asaf Pesach
1Department of electrical engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel. eladg1@tx.technion.ac.il
Abstract:
We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carried out through a novel interferometric technique. The measured interferogram yields a change in the refractive index varying from -5 × 10(-3) to 6 × 10(-3) as a function of the wavelength, introduced by the intersubband resonance at 1.5 µm. These results compare well with those derived using Kramers-Kronig transform of the measured absorption spectrum.

