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A Multimodal Wide-Field Fourier-Transform Raman Microscope

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Stroboscopic scanning white light interferometry at 2.7 MHz with 1.6 µm coherence length using a non-phosphor LED

Ville Heikkinen¹, Ivan Kassamakov, Tor Paulin

¹Department of Physics, University of Helsinki, PO Box 64, 00014 Helsinki, Finland. ville.heikkinen@helsinki.fi

|March 14, 2013

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Researchers developed a novel wideband light source to enhance stroboscopic scanning white light interferometry (SSWLI) for precise 3D measurements of dynamic samples, achieving 40 nm precision.

Area of Science:

Optics and Photonics
Metrology
Microelectromechanical Systems (MEMS)

Background:

Stroboscopic scanning white light interferometry (SSWLI) is crucial for 3D measurements of oscillating samples.
Existing commercial SSWLI systems have limitations in pulsing frequency, hindering high-speed measurements.
There is a need for improved light sources to overcome these limitations.

Purpose of the Study:

To develop a high-frequency, high-performance light source for SSWLI.
To enhance the precision and applicability of SSWLI for dynamic micro-scale measurements.
To enable 3D profiling of high-frequency oscillating MEMS devices.

Main Methods:

Designed and constructed a 400-620 nm wideband 150 mW light source by combining non-phosphor white and cyan LEDs.

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The light source produces an interferogram with a 1.6 µm width and no side peaks.

Integrated the new light source into an SSWLI system for dynamic measurements.

Main Results:

Achieved 10 nm precision when measuring a calibration artifact.
Demonstrated 40 nm precision in the 3D profile measurement of a 2.72 MHz capacitive micromachined ultrasonic transducer (CMUT) membrane.
The developed light source is compatible with solid-state technology.

Conclusions:

The novel wideband light source significantly improves SSWLI capabilities for dynamic measurements.
The system offers high precision for characterizing high-frequency MEMS devices.
This advancement paves the way for more sophisticated metrology in micro-systems engineering.